ES1J R3G

new-10%

Manufacturer part number:ES1J R3G

Manufacturer:Taiwan Semiconductor Corporation

Description:DIODE GEN PURP 600V 1A DO214AC

Case Package:SOT-23

Datasheet:ES1J R3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mounting Type	Surface Mount
Package / Case	DO-214AC, SMA
Surface Mount	YES
Diode Element Material	SILICON
Packaging	Digi-Reel®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Position	DUAL
Terminal Form	C BEND
JESD-30 Code	R-PDSO-C2
Operating Temperature (Max)	150°C
Number of Elements	1
Configuration	SINGLE
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	5μA @ 600V
Voltage - Forward (Vf) (Max) @ If	1.7V @ 1A
Operating Temperature - Junction	-55°C~150°C
Output Current-Max	1A
Voltage - DC Reverse (Vr) (Max)	600V
Current - Average Rectified (Io)	1A
Reverse Recovery Time	35ns
Rep Pk Reverse Voltage-Max	600V
Capacitance @ Vr, F	18pF @ 4V 1MHz
RoHS Status	ROHS3 Compliant