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ES3JBHR5G

  • ES3JBHR5G
  • ES3JBHR5G

ES3JBHR5G

ES3JBHR5G

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 3A DO214AA

SOT-23

ES3JBHR5G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Package / Case DO-214AA, SMB
Supplier Device Package DO-214AA (SMB)
Packaging Tape & Reel (TR)
Published 2017
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 10μA @ 600V
Voltage - Forward (Vf) (Max) @ If 1.45V @ 3A
Operating Temperature - Junction -55°C~150°C
Voltage - DC Reverse (Vr) (Max) 600V
Current - Average Rectified (Io) 3A
Reverse Recovery Time 35ns
Capacitance @ Vr, F 34pF @ 4V 1MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.668000 $0.668
10 $0.630189 $6.30189
100 $0.594518 $59.4518
500 $0.560866 $280.433
1000 $0.529119 $529.119

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