ESH2BA R3G

new-10%

Manufacturer part number:ESH2BA R3G

Manufacturer:Taiwan Semiconductor Corporation

Description:DIODE GEN PURP 100V 1A DO214AC

Case Package:SOT-23

Datasheet:ESH2BA R3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mounting Type	Surface Mount
Package / Case	DO-214AC, SMA
Supplier Device Package	DO-214AC (SMA)
Packaging	Tape & Reel (TR)
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	1μA @ 200V
Voltage - Forward (Vf) (Max) @ If	900mV @ 1A
Operating Temperature - Junction	-55°C~175°C
Voltage - DC Reverse (Vr) (Max)	100V
Current - Average Rectified (Io)	1A
Reverse Recovery Time	25ns
Capacitance @ Vr, F	25pF @ 4V 1MHz
RoHS Status	ROHS3 Compliant