F1T6G R0G

new-10%

Manufacturer part number:F1T6G R0G

Manufacturer:Taiwan Semiconductor Corporation

Description:DIODE GEN PURP 800V 1A TS-1

Case Package:SOT-23

Datasheet:F1T6G R0G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mounting Type	Through Hole
Package / Case	T-18, Axial
Surface Mount	NO
Diode Element Material	SILICON
Packaging	Tape & Reel (TR)
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	HIGH RELIABILITY, LOW POWER LOSS
Subcategory	Rectifier Diodes
Terminal Form	WIRE
JESD-30 Code	O-PALF-W2
Operating Temperature (Max)	150°C
Number of Elements	1
Configuration	SINGLE
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	5μA @ 800V
Voltage - Forward (Vf) (Max) @ If	1.3V @ 1A
Case Connection	ISOLATED
Operating Temperature - Junction	-55°C~150°C
Output Current-Max	1A
Voltage - DC Reverse (Vr) (Max)	800V
Current - Average Rectified (Io)	1A
Reverse Recovery Time	500ns
Rep Pk Reverse Voltage-Max	800V
Capacitance @ Vr, F	15pF @ 4V 1MHz
Non-rep Pk Forward Current-Max	30A
RoHS Status	ROHS3 Compliant