HS2M R5G

new-10%

Manufacturer part number:HS2M R5G

Manufacturer:Taiwan Semiconductor Corporation

Description:DIODE GEN PURP 1KV 2A DO214AA

Case Package:SOT-23

Datasheet:HS2M R5G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mounting Type	Surface Mount
Package / Case	DO-214AA, SMB
Surface Mount	YES
Diode Element Material	SILICON
Packaging	Digi-Reel®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOW POWER LOSS
HTS Code	8541.10.00.80
Terminal Position	DUAL
Terminal Form	C BEND
JESD-30 Code	R-PDSO-C2
Operating Temperature (Max)	150°C
Number of Elements	1
Configuration	SINGLE
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	5μA @ 1000V
Voltage - Forward (Vf) (Max) @ If	1.7V @ 2A
Operating Temperature - Junction	-55°C~150°C
Output Current-Max	2A
Application	EFFICIENCY
Voltage - DC Reverse (Vr) (Max)	1000V
Current - Average Rectified (Io)	2A
Number of Phases	1
Reverse Recovery Time	75ns
Rep Pk Reverse Voltage-Max	1000V
Capacitance @ Vr, F	30pF @ 4V 1MHz
Non-rep Pk Forward Current-Max	50A
Reverse Current-Max	5μA
RoHS Status	ROHS3 Compliant