HS3JB R5G

new-10%

Manufacturer part number:HS3JB R5G

Manufacturer:Taiwan Semiconductor Corporation

Description:DIODE GEN PURP 600V 3A DO214AA

Case Package:SOT-23

Datasheet:HS3JB R5G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mounting Type	Surface Mount
Package / Case	DO-214AA, SMB
Surface Mount	YES
Diode Element Material	SILICON
Packaging	Digi-Reel®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
HTS Code	8541.10.00.80
Terminal Position	DUAL
Terminal Form	C BEND
JESD-30 Code	R-PDSO-C2
Operating Temperature (Max)	150°C
Number of Elements	1
Configuration	SINGLE
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	10μA @ 600V
Voltage - Forward (Vf) (Max) @ If	1.7V @ 3A
Operating Temperature - Junction	-55°C~150°C
Output Current-Max	3A
Application	EFFICIENCY
Voltage - DC Reverse (Vr) (Max)	600V
Current - Average Rectified (Io)	3A
Number of Phases	1
Reverse Recovery Time	75ns
Rep Pk Reverse Voltage-Max	600V
Capacitance @ Vr, F	50pF @ 4V 1MHz
Non-rep Pk Forward Current-Max	100A
Reverse Current-Max	10μA
RoHS Status	ROHS3 Compliant