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HS3KB R5G

HS3KB R5G

HS3KB R5G

Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 3A DO214AA

SOT-23

HS3KB R5G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Package / Case DO-214AA, SMB
Surface Mount YES
Diode Element Material SILICON
Packaging Digi-Reel®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
HTS Code 8541.10.00.80
Terminal Position DUAL
Terminal Form C BEND
JESD-30 Code R-PDSO-C2
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 10μA @ 800V
Voltage - Forward (Vf) (Max) @ If 1.7V @ 3A
Operating Temperature - Junction -55°C~150°C
Output Current-Max 3A
Application EFFICIENCY
Voltage - DC Reverse (Vr) (Max) 800V
Current - Average Rectified (Io) 3A
Number of Phases 1
Reverse Recovery Time 75ns
Rep Pk Reverse Voltage-Max 800V
Capacitance @ Vr, F 50pF @ 4V 1MHz
Non-rep Pk Forward Current-Max 100A
Reverse Current-Max 10μA
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.76000 $0.76
500 $0.7524 $376.2
1000 $0.7448 $744.8
1500 $0.7372 $1105.8
2000 $0.7296 $1459.2
2500 $0.722 $1805

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