MUR360SBHR5G

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Manufacturer part number:MUR360SBHR5G

Manufacturer:Taiwan Semiconductor Corporation

Description:DIODE GEN PURP 600V 3A DO214AA

Case Package:SOT-23

Datasheet:MUR360SBHR5G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mounting Type	Surface Mount
Package / Case	DO-214AA, SMB
Surface Mount	YES
Diode Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2017
Series	Automotive, AEC-Q101
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
HTS Code	8541.10.00.80
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-C2
Operating Temperature (Max)	175°C
Number of Elements	1
Configuration	SINGLE
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	10μA @ 600V
Voltage - Forward (Vf) (Max) @ If	1.25V @ 3A
Operating Temperature - Junction	-55°C~175°C
Output Current-Max	3A
Application	EFFICIENCY
Voltage - DC Reverse (Vr) (Max)	600V
Current - Average Rectified (Io)	3A
Number of Phases	1
Reverse Recovery Time	50ns
Rep Pk Reverse Voltage-Max	600V
Capacitance @ Vr, F	40pF @ 4V 1MHz
Non-rep Pk Forward Current-Max	75A
Reverse Current-Max	10μA
RoHS Status	ROHS3 Compliant