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S1JL RVG

S1JL RVG

S1JL RVG

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A SUB SMA

SOT-23

S1JL RVG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Package / Case DO-219AB
Surface Mount YES
Diode Element Material SILICON
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOW POWER LOSS
HTS Code 8541.10.00.80
Subcategory Rectifier Diodes
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-F2
Operating Temperature (Max) 175°C
Number of Elements 1
Configuration SINGLE
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 5μA @ 600V
Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A
Operating Temperature - Junction -55°C~175°C
Output Current-Max 1A
Voltage - DC Reverse (Vr) (Max) 600V
Current - Average Rectified (Io) 1A
Reverse Recovery Time 1.8μs
Rep Pk Reverse Voltage-Max 800V
Capacitance @ Vr, F 9pF @ 4V 1MHz
Non-rep Pk Forward Current-Max 30A
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.06000 $0.06
500 $0.0594 $29.7
1000 $0.0588 $58.8
1500 $0.0582 $87.3
2000 $0.0576 $115.2
2500 $0.057 $142.5

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