TPAR3J S1G

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Manufacturer part number:TPAR3J S1G

Manufacturer:Taiwan Semiconductor Corporation

Description:DIODE AVALANCHE 600V 3A TO277A

Case Package:SOT-23

Datasheet:TPAR3J S1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mounting Type	Surface Mount
Package / Case	TO-277, 3-PowerDFN
Surface Mount	YES
Diode Element Material	SILICON
Packaging	Digi-Reel®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	LOW LEAKAGE CURRENT
HTS Code	8541.10.00.80
Terminal Position	DUAL
Terminal Form	FLAT
JESD-30 Code	R-PDSO-F3
Operating Temperature (Max)	175°C
Number of Elements	1
Configuration	SINGLE
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Avalanche
Current - Reverse Leakage @ Vr	10μA @ 600V
Voltage - Forward (Vf) (Max) @ If	1.55V @ 3A
Case Connection	CATHODE
Operating Temperature - Junction	-55°C~175°C
Output Current-Max	3A
Voltage - DC Reverse (Vr) (Max)	600V
Current - Average Rectified (Io)	3A
Number of Phases	1
Reverse Recovery Time	120ns
Rep Pk Reverse Voltage-Max	600V
JEDEC-95 Code	TO-277A
Capacitance @ Vr, F	58pF @ 4V 1MHz
Non-rep Pk Forward Current-Max	60A
Reverse Current-Max	10μA
RoHS Status	ROHS3 Compliant