TSM10N60CI C0 Overview

The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 487 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1738pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 9.5A.Peak drain current is 38A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 600V.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

TSM10N60CI C0 Features

the avalanche energy rating (Eas) is 487 mJ
based on its rated peak drain current 38A.
a 600V drain to source voltage (Vdss)

TSM10N60CI C0 Applications

There are a lot of Taiwan Semiconductor Corporation
TSM10N60CI C0 applications of single MOSFETs transistors.

• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies