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TSM1NB60SCT B0

  • TSM1NB60SCT B0
  • TSM1NB60SCT B0

TSM1NB60SCT B0

TSM1NB60SCT B0

Taiwan Semiconductor Corporation

MOSFET (Metal Oxide) N-Channel 10Ohm @ 250mA, 10V ±30V 138pF @ 25V 6.1nC @ 10V 600V TO-226-3, TO-92-3 (TO-226AA)

SOT-23

TSM1NB60SCT B0 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92
Operating Temperature -55°C~150°C TJ
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 138pF @ 25V
Current - Continuous Drain (Id) @ 25°C 500mA Tc
Gate Charge (Qg) (Max) @ Vgs 6.1nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS Status Non-RoHS Compliant
TSM1NB60SCT B0 Product Details

TSM1NB60SCT B0 Overview


The maximum input capacitance of this device is 138pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

TSM1NB60SCT B0 Features


a 600V drain to source voltage (Vdss)


TSM1NB60SCT B0 Applications


There are a lot of Taiwan Semiconductor Corporation
TSM1NB60SCT B0 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

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