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TSM8N80CI C0G

  • TSM8N80CI C0G
  • TSM8N80CI C0G

TSM8N80CI C0G

TSM8N80CI C0G

Taiwan Semiconductor Corporation

MOSFET (Metal Oxide) N-Channel Tube 1.05 Ω @ 4A, 10V ±30V 1921pF @ 25V 41nC @ 10V 800V TO-220-3 Full Pack, Isolated Tab

SOT-23

TSM8N80CI C0G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 40.3W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.05 Ω @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1921pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.94000 $2.94
10 $2.65200 $26.52
100 $2.13140 $213.14
500 $1.65778 $828.89
TSM8N80CI C0G Product Details

TSM8N80CI C0G Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1921pF @ 25V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 800V.Using drive voltage (10V) reduces this device's overall power consumption.

TSM8N80CI C0G Features


a 800V drain to source voltage (Vdss)


TSM8N80CI C0G Applications


There are a lot of Taiwan Semiconductor Corporation
TSM8N80CI C0G applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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