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CSD23381F4T

CSD23381F4T

CSD23381F4T

Texas Instruments

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 175m Ω @ 500mA, 4.5V 236pF @ 6V 1.14nC @ 6V 12V 3-XFDFN

SOT-23

CSD23381F4T Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Factory Lead Time 6 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series FemtoFET™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD23381
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 4.5 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 175m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 236pF @ 6V
Current - Continuous Drain (Id) @ 25°C 2.3A Ta
Gate Charge (Qg) (Max) @ Vgs 1.14nC @ 6V
Rise Time 3.9ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 2.3A
Threshold Voltage -950mV
Gate to Source Voltage (Vgs) -8V
Drain to Source Breakdown Voltage -12V
Height 350μm
Length 1.035mm
Width 635μm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.99000 $0.99
500 $0.9801 $490.05
1000 $0.9702 $970.2
1500 $0.9603 $1440.45
2000 $0.9504 $1900.8
2500 $0.9405 $2351.25
CSD23381F4T Product Details

CSD23381F4T Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 236pF @ 6V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 2.3A amps.In this device, the drain-source breakdown voltage is -12V and VGS=-12V, so the drain-source breakdown voltage is -12V in this case.It is [18 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 4.5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is -8V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is -950mV.To operate this transistor, you will need a 12V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (1.8V 4.5V).

CSD23381F4T Features


a continuous drain current (ID) of 2.3A
a drain-to-source breakdown voltage of -12V voltage
the turn-off delay time is 18 ns
a threshold voltage of -950mV
a 12V drain to source voltage (Vdss)


CSD23381F4T Applications


There are a lot of Texas Instruments
CSD23381F4T applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies

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