ISO7721QDRQ1  Description

The ISO772x-Q1 devices are high-performance dual-channel digital isolators that provide UL 1577-compliant 5000VRMS (DW package) and 3000VRMS (D package) isolation ratings. These devices are also certified for VDE, TUV, CSA, and CQC approvals. In the isolated complementary metal oxide semiconductor (CMOS) or low voltage mutual complementary metal oxide semiconductor (LVCMOS) digital I/O. ISO772x-Q1 devices also offer high EMI immunity and low and low radiation, while offering low power consumption. Each isolated channel has an integrated SiO2 (SiO2) insulated barrier separating the logic input and output buffers. The ISO7720-Q1 device has two simultaneous channels and the -Q1 device has two reverse channels. The ISO7720-Q1 device has two isotropic channels and the -Q1 device has two inverted channels. If there is a loss of input power or signal, the If there is a loss of input power or signal, the default output is high for devices without the F suffix and low for devices with the F suffix. is output low by default. For more details, see Device See the Device Functional Modes section for more details. When used with an isolated power supply, these devices help prevent noise currents on the data bus or other circuits. noise currents on the data bus or other circuits from entering the local ground and interfering with or damaging sensitive circuits. With innovative chip design and wiring technology, the ISO772x-Q ISO772x-Q1 devices offer significant EMC enhancements, mitigating system-level ESD, EFT System-level ESD, EFT, and surge issues are mitigated and radiation standards are met. The ISO772x-Q1 family of devices is available in 16-pin SOIC wide-body (DW) and 8-pin 8-pin (DW) versions. The ISO772x-Q1 family is available in 16-pin SOIC wide-body (DW) and 8-pin SOIC narrow-body (D) packages.

ISO7721QDRQ1  Features

Automotive Electronics Application Certification

- With the following results in accordance with AEC-Q100 standards.

- Device temperature level 1: -40°C to +125°C ambient operating temperature

Temperature range

- Device Human Body Discharge Model (HBM) Electrostatic discharge (ESD) classification

Class 3A

- Device Component Charging Mode (CDM) ESD classification level C6

- Signal transfer rate: up to 100Mbps

- Wide supply voltage range: 2.25V to 5.5V

- 2.25V and 5V level conversion

- Default output high and low-level options

- Low power consumption, 1.7mA per channel typical at 1Mbps

- Low propagation delay: 11ns typical

(powered from 5V supply)

- High common mode transient immunity (CMTI): ±100kV/μs (typical)

- Excellent electromagnetic compatibility (EMC)

- System-level electrostatic discharge (ESD), transient discharge (EFT) and

Anti-surge protection

- Low radiation

- Isolation gate life: > 40 years

- Wide body small form factor integrated circuits (SOIC) (DW-16) and narrow body

Small Form Factor IC (SOIC) (D-8) package options

- Safety-related approvals.

- VDE enhanced isolation to DIN V

VDE V 0884-10 (VDE V 0884-10):2006-12

Standard

- 5000VRMS (DW) and 3000VRMS (D) isolation ratings according to UL 1577

(D) Isolation ratings

- CSA Component Acceptance Notice 5A, IEC 60950-1, and IEC 60601-1

60601-1 terminal equipment standards

- CQC certification to GB4943.1-2011

- TUV according to EN 60950-1 and EN 61010-1

Certifications

- VDE, UL, CSA, and TUV approvals completed for DW packages

Certification; all other certifications planned

ISO7721QDRQ1 Applications

Hybrid electric vehicles

- Motor control

- Power Supplies

- Solar inverters