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LF356N

LF356N

LF356N

Texas Instruments

1 Channels 30pA 80 dB Instrumentational OP Amps 0.0002μA 15V ±15V LF356 8 Pins 8-DIP (0.300, 7.62mm)

SOT-23

LF356N Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case 8-DIP (0.300, 7.62mm)
Number of Pins 8
Operating Temperature 0°C~70°C
Packaging Tube
Series BI-FET™
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Operational Amplifier
Packing Method RAIL
Max Power Dissipation 670mW
Technology BIPOLAR
Terminal Position DUAL
Number of Functions 1
Supply Voltage 15V
Terminal Pitch 2.54mm
Base Part Number LF356
Pin Count 8
Operating Supply Voltage 15V
Number of Channels 1
Operating Supply Current 5mA
Nominal Supply Current 5mA
Power Dissipation 670mW
Output Current 25mA
Max Supply Current 10mA
Slew Rate 12V/μs
Architecture VOLTAGE-FEEDBACK
Amplifier Type J-FET
Common Mode Rejection Ratio 80 dB
Current - Input Bias 30pA
Voltage - Supply, Single/Dual (±) ±15V
Input Offset Voltage (Vos) 10mV
Bandwidth 5MHz
Neg Supply Voltage-Nom (Vsup) -15V
Unity Gain BW-Nom 5000 kHz
Voltage Gain 106.02dB
Average Bias Current-Max (IIB) 0.0002μA
Power Supply Rejection Ratio (PSRR) 80dB
Low-Offset NO
Frequency Compensation YES
Voltage - Input Offset 3mV
Low-Bias YES
Bias Current-Max (IIB) @25C 0.0002μA
Input Offset Current-Max (IIO) 0.002μA
Height 3.3mm
Length 9.27mm
Width 6.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
LF356N Product Details
LF356N Description

The LF356N/NOPB is a monolithic JFET input precision Operational Amplifier to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET? Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.
LF356N Features

Fast slew rate
Wide gain bandwidth
Low input noise voltage
Extremely fast settling time to 0.01%
Replace expensive hybrid and module FET op amps
Rugged JFETs allow blow-out free handling compared with MOSFET input devices
LF356N Applications

. precision high speed integrators
. fast d/a and converters
. high impedance buffers
. wideband, low noise, low drift amplifiers
. logarithimic amplifiers
. photocell amplifiers
. sample and hold circuits

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