1 Channels 30pA 80 dB Instrumentational OP Amps 0.0002μA 15V ±15V LF356 8 Pins 8-DIP (0.300, 7.62mm)
SOT-23
LF356N Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
8-DIP (0.300, 7.62mm)
Number of Pins
8
Operating Temperature
0°C~70°C
Packaging
Tube
Series
BI-FET™
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Operational Amplifier
Packing Method
RAIL
Max Power Dissipation
670mW
Technology
BIPOLAR
Terminal Position
DUAL
Number of Functions
1
Supply Voltage
15V
Terminal Pitch
2.54mm
Base Part Number
LF356
Pin Count
8
Operating Supply Voltage
15V
Number of Channels
1
Operating Supply Current
5mA
Nominal Supply Current
5mA
Power Dissipation
670mW
Output Current
25mA
Max Supply Current
10mA
Slew Rate
12V/μs
Architecture
VOLTAGE-FEEDBACK
Amplifier Type
J-FET
Common Mode Rejection Ratio
80 dB
Current - Input Bias
30pA
Voltage - Supply, Single/Dual (±)
±15V
Input Offset Voltage (Vos)
10mV
Bandwidth
5MHz
Neg Supply Voltage-Nom (Vsup)
-15V
Unity Gain BW-Nom
5000 kHz
Voltage Gain
106.02dB
Average Bias Current-Max (IIB)
0.0002μA
Power Supply Rejection Ratio (PSRR)
80dB
Low-Offset
NO
Frequency Compensation
YES
Voltage - Input Offset
3mV
Low-Bias
YES
Bias Current-Max (IIB) @25C
0.0002μA
Input Offset Current-Max (IIO)
0.002μA
Height
3.3mm
Length
9.27mm
Width
6.35mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
In-Stock:1622 items
LF356N Product Details
LF356N Description
The LF356N/NOPB is a monolithic JFET input precision Operational Amplifier to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET? Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner. LF356N Features
Fast slew rate Wide gain bandwidth Low input noise voltage Extremely fast settling time to 0.01% Replace expensive hybrid and module FET op amps Rugged JFETs allow blow-out free handling compared with MOSFET input devices LF356N Applications
. precision high speed integrators . fast d/a and converters . high impedance buffers . wideband, low noise, low drift amplifiers . logarithimic amplifiers . photocell amplifiers . sample and hold circuits
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