LMG1205YFXT Description

In a synchronous buck, boost, or half-bridge configuration, the LMG1205YFXT is designed to drive both the high-side and low-side enhancement mode Gallium Nitride (GaN) FETs. For optimum control flexibility, the device incorporates an incorporated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs. The high-side bias voltage is generated via a bootstrap approach and is internally clamped at 5 V, preventing the gate voltage from exceeding enhancement-mode GaN FETs' maximum gate-source voltage rating. The LMG1205YFXT's inputs are compatible with TTL logic and can handle input voltages of up to 14 V regardless of the VDD voltage. The split-gate outputs of the LMG1205YFXT allow you to change the turnon and turnoff strength individually. Furthermore, the LMG1205YFXT's robust sink capacity keeps the gate in a low state during switching, preventing inadvertent turn-on. The LMG1205YFXT has a frequency range of many MHz. The LMG1205YFXT comes in a 12-pin DSBGA package, which has a small footprint and low package inductance.

LMG1205YFXT Features

• Low Power Consumption

• Supply Rail Undervoltage Lockout

• 1.2-A Peak Source, 5-A Sink Current

• Fast Propagation Times (35 ns Typical)

• 0.6-? Pulldown, 2.1-? Pullup Resistance

• Internal Bootstrap Supply Voltage Clamping

• Split Outputs for Adjustable Turnon, Turnoff Strength

• Excellent Propagation Delay Matching (1.5 ns Typical)

• Independent High-Side and Low-Side TTL Logic Inputs

• High-Side Floating Bias Voltage Rail Operates up to 100 VDC

LMG1205YFXT Applications

• Synchronous Buck Converters

• Half and Full-Bridge Converters

• Two-Switch Forward Converters

• Current-Fed Push-Pull Converters

• Forward with Active Clamp Converters