TLV75533PDBVR Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout, yielding one of the world's lowest on-resistance and gate charges. They are therefore suitable for the most demanding high-efficiency converters.

TLV75533PDBVR Features

Input Voltage Range: 1.45 V to 5.5 V 

Low IQ: 25 |ìA (Typical) 

Low Dropout: ¨C 238 mV (Maximum) at 500 mA (3.3 VOUT) 

Output Accuracy: 1% (Maximum at 85??C) 

Built-In Soft-Start With Monotonic VOUT Rise 

Foldback Current Limit 

Active Output Discharge 

High PSRR: 46 dB at 100 kHz 

Stable With a 1-|ìF Ceramic Output Capacitor 

Packages: 

¨C 2.9-mm ?á 1.6-mm SOT-23-5 

¨C 1-mm x 1-mm X2SON-4 

¨C 2 mm ?á 2 mm WSON-6

TLV75533PDBVR Applications

Switching applications