This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench? process that has been specially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.
TM4C1294NCPDTI3R Features
Max rDS(on) = 0.8 m at VGS = 10 V, ID = 50 A
Max rDS(on) = 1.1 m at VGS = 6 V, ID = 42 A
Fast Switching Speed
Low Gate Charge
High Performance Trench Technology for Extremely Low RDS(on)