TPS1100DR

new-10%

Manufacturer part number:TPS1100DR

Manufacturer:Texas Instruments

Description:MOSFET Single P-Ch Enh-Mode MOSFET

Case Package:SOT-23

Datasheet:TPS1100DR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Contact Plating	Gold
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Additional Feature	LOGIC LEVEL COMPATIBLE, ESD PROTECTED
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Base Part Number	TPS1100
Pin Count	8
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	791mW Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	791mW
Turn On Delay Time	4.5 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	180m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C	1.6A Ta
Gate Charge (Qg) (Max) @ Vgs	5.45nC @ 10V
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	2.7V 10V
Vgs (Max)	+2V, -15V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	13 ns
Continuous Drain Current (ID)	1.6A
JEDEC-95 Code	MS-012AA
Gate to Source Voltage (Vgs)	2V
Drain-source On Resistance-Max	0.4Ohm
Drain to Source Breakdown Voltage	15V
Height	1.75mm
Length	4.9mm
Width	3.91mm
Thickness	1.58mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free