TPS22917DBVT Description

The TPS22917D device is a small, single channel load switch using a low leakage P-Channel MOSFET for minimum power loss. Advanced gate control design supports operating voltages as low as 1 V with minimal increase in ON-Resistance and power loss.
The switch ON state is controlled by a digital input that can interface directly with low-voltage control signals. The TPS22917 uses active high enable logic, while the TPS22917L uses active low. When power is first applied, a Smart Pulldown is used to keep the ON pin from floating until system sequencing is complete. After the ON pin is deliberately driven high (≥VIH), the Smart Pulldown (RPD) is disconnected to prevent unnecessary power loss. The TPS22917D device is available in a leaded SOT-23 package (DBV) which allows visual inspection of solder joints. The device is characterized for operation over a temperature range of ﹣40 ℃ to 125 ℃.
TPS22917DBVT Features

Input operating voltage range (VIN): 1 V to 5.5 V
Maximum continuous current (IMAX): 2 A
5 VIN = 80 m? (typical)
1.8 VIN = 120 m? (typical)
1 VIN = 220 m? (typical)
ON state (IQ): 0.5 μA (typical)
OFF state (ISD): 10 nA (typical)
ON ≥ VIH (ION): 10 nA (maximum)
ON ≤ VIL (RPD): 750 kΩ (typical)
TPS22917DBVT Applications

Industrial systems
Set top box
Blood glucose meters
Electronic point of sale
5G Communication
Electrification of automobile
Industrial 4.0