2SK3078A

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Manufacturer part number:2SK3078A

Manufacturer:Toshiba

Description:2SK3078A datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Toshiba stock available on our website

Case Package:SOT-23

Datasheet:2SK3078A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Surface Mount	YES
Material	Si
Number of Terminals	3
Transistor Element Material	SILICON
ECCN (US)	EAR99
Channel Mode	Enhancement
Number of Elements per Chip	1
Maximum Drain Source Voltage (V)	10
Maximum Gate Source Voltage (V)	5
Maximum Gate Threshold Voltage (V)	1.2
Maximum VSWR	10
Maximum Continuous Drain Current (A)	0.5
Maximum Gate Source Leakage Current (nA)	5000
Maximum IDSS (uA)	10
Maximum Power Dissipation (mW)	3000
Output Power (W)	0.028(Min)
Typical Power Gain (dB)	8(Min)
Typical Drain Efficiency (%)	50(Min)
Minimum Operating Temperature (°C)	-45
Maximum Operating Temperature (°C)	150
Standard Package Name	SOT
Supplier Package	PW-Mini
Military	No
Mounting	Surface Mount
Package Height	1.6(Max)
Package Length	4.6(Max)
Package Width	2.5
PCB changed	3
Tab	Tab
Lead Shape	Flat
Manufacturer	Toshiba America Electronic Components
Package Shape	RECTANGULAR
Packaging	Tape and Reel
Part Status	Active
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Terminal Position	SINGLE
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
Pin Count	4
JESD-30 Code	R-PSSO-F3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	Single Dual Source
Operating Mode	ENHANCEMENT MODE
Transistor Application	AMPLIFIER
Polarity/Channel Type	N-CHANNEL
Drain Current-Max (Abs) (ID)	0.5 A
DS Breakdown Voltage-Min	10 V
Channel Type	N
FET Technology	METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)	3 W
Highest Frequency Band	ULTRA HIGH FREQUENCY BAND
Power Gain-Min (Gp)	8 dB
RoHS Status	RoHS Compliant