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2SK365-GR(F)

2SK365-GR(F)

2SK365-GR(F)

Toshiba

2SK365-GR(F) datasheet pdf and Transistors - JFETs product details from Toshiba stock available on our website

SOT-23

2SK365-GR(F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Material Si
ECCN (US) EAR99
Maximum Gate Source Voltage (V) -1.5
Maximum Drain Gate Voltage (V) 50
Maximum Continuous Drain Current (mA) 6.5
Maximum Power Dissipation (mW) 200
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 125
AEC Qualified No
Military No
Mounting Through Hole
Package Height 3.2(Max)
Package Length 4.2(Max)
Package Width 2.6(Max)
PCB changed 3
Lead Shape Through Hole
Part Status Obsolete
Pin Count 3
Configuration Single
Channel Type N
RoHS Status RoHS Compliant

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