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3SK126-O(TE85L,F)

3SK126-O(TE85L,F)

3SK126-O(TE85L,F)

Toshiba

3SK126-O(TE85L,F) datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Toshiba stock available on our website

SOT-23

3SK126-O(TE85L,F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Material Si
ECCN (US) EAR99
Channel Mode Depletion
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 15
Maximum Gate Source Voltage (V) ±9
Maximum Continuous Drain Current (A) 0.03
Typical Input Capacitance @ Vds (pF) 4.25@6V
Typical Reverse Transfer Capacitance @ Vds (pF) 0.03@6V
Typical Forward Transconductance (S) 0.02
Maximum Power Dissipation (mW) 150
Typical Power Gain (dB) 25
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 125
Supplier Package 2-3J1A
Military No
Mounting Surface Mount
Package Height 1.1
Package Length 2.9
Package Width 1.5
PCB changed 3
Tab Tab
Packaging Tape and Reel
Part Status Obsolete
Pin Count 4
Configuration Single Dual Gate
Channel Type N
RoHS Status RoHS Compliant

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