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HN1D03FU,LF(T

HN1D03FU,LF(T

HN1D03FU,LF(T

Toshiba

Tape and Reel

SOT-23

HN1D03FU,LF(T Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Material Si
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 80
Peak Reverse Repetitive Voltage (V) 85
Maximum Continuous Forward Current (A) 0.1
Peak Non-Repetitive Surge Current (A) 2
Peak Forward Voltage (V) 1.2
Peak Reverse Current (uA) 0.5
Maximum Diode Capacitance (pF) 3
Maximum Power Dissipation (mW) 200
Peak Reverse Recovery Time (ns) 4
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 125
Supplier Temperature Grade Automotive
Supplier Package US
Military No
Mounting Surface Mount
Package Height 0.9
Package Length 2
Package Width 1.25
PCB changed 6
RoHS Compliant
Packaging Tape and Reel
Part Status Active
Type Switching Diode
Pin Count 6
Configuration Dual Common Anode Dual Common Cathode
Max Reverse Voltage (DC) 80 V
Average Rectified Current 80 mA
Reverse Recovery Time 4 ns
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.194616 $0.194616
10 $0.183600 $1.836
100 $0.173208 $17.3208
500 $0.163403 $81.7015
1000 $0.154154 $154.154
HN1D03FU,LF(T Product Details

HN1D03FU,LF(T Overview


Datasheets indicate 1.2 as the peak forward voltage.RF diode consumes about 0.1 continuous forward current at any given time.RF diode must be operated wRF diodeh a DC reverse voltage less than 80 V.

HN1D03FU,LF(T Features


the forward peak voltage is 1.2


HN1D03FU,LF(T Applications


There are a lot of Toshiba
HN1D03FU,LF(T applications of RF diodes.


  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters

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