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JDV2S41FS

JDV2S41FS

JDV2S41FS

Toshiba

VARIABLE CAPACITANCE DIODE SILICON NOT SPECIFIED DUAL Tape and Reel

SOT-23

JDV2S41FS Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Surface MountYES
Diode Element Material SILICON
Number of Terminals 2
ECCN (US) EAR99
Applications Frequency Range VHF|UHF
Maximum Reverse Voltage (V) 15
Maximum Reverse Current (uA) 0.003
Minimum Tuning Ratio 2
Tuning Ratio Test Condition 2V/10V
Minimum Diode Capacitance (pF) 14@2V
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 125
Supplier Package fSC
Military No
Mounting Surface Mount
Package Height 0.48
Package Length 0.8
Package Width 0.6
PCB changed 2
Lead Shape Flat
Package Shape RECTANGULAR
Manufacturer Toshiba America Electronic Components
PackagingTape and Reel
Part StatusActive
ECCN Code EAR99
Type VCO|Tuner
HTS Code8541.10.00.80
Terminal Position DUAL
Terminal FormFLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Pin Count2
JESD-30 Code R-PDSO-F2
Qualification StatusNot Qualified
Number of Elements 1
Configuration Single
Diode Type VARIABLE CAPACITANCE DIODE
Breakdown Voltage-Min 15 V
Frequency Band ULTRA HIGH FREQUENCY
Diode Capacitance-Nom 15 pF
Diode Cap Tolerance 6.67%
Diode Capacitance Ratio-Min 2.5
RoHS StatusRoHS Compliant
In-Stock:3720 items

JDV2S41FS Product Details

JDV2S41FS Overview


The maximum reverse voltage that can be consumed by this device is around 15.There may be times when this device runs at its lowest possible breakdown voltage, which is 15 V.

JDV2S41FS Features


at its lowest breakdown voltage of 15 V


JDV2S41FS Applications


There are a lot of Toshiba
JDV2S41FS applications of RF diodes.


  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches

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