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RN1408,LF(B

  • RN1408,LF(B
  • RN1408,LF(B

RN1408,LF(B

RN1408,LF(B

Toshiba

RN1408,LF(B datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba stock available on our website

SOT-23

RN1408,LF(B Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Package / Case TO-236-3
Published 2014
Power Dissipation-Max 200mW
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
RoHS Status RoHS Compliant

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