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RN4987FE,LF(CB

  • RN4987FE,LF(CB
  • RN4987FE,LF(CB

RN4987FE,LF(CB

RN4987FE,LF(CB

Toshiba

RN4987FE,LF(CB datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from Toshiba stock available on our website

SOT-23

RN4987FE,LF(CB Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Published 2014
Power Dissipation-Max 100mW
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 200MHz
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.198877 $0.198877
10 $0.187620 $1.8762
100 $0.177000 $17.7
500 $0.166981 $83.4905
1000 $0.157529 $157.529

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