TC58NYG0S3HBAI6 Overview

A EEPROM, NAND, SLC NAND-type memory can be classified as the memory type of this device. A total of 67 terminations have been planted on the chip. The comprehensive working procedure of this part involves 1 functions. In order to power this memory device, 1.8V will be necessary. A 67-pin package containing this memory device is used to house this device. The memory device in question has 67 pins, thus indicating that it has 67 memory locations that can be accessed. There is a note indicating that this memory chip operates at an 1.8V volt supply voltage. There must not be a minimum operating temperature of less than -40°C for this device. A temperature of no more than 85°C centigrade is recommended for the component to be operated, otherwise, damage might be inflicted on the component.

TC58NYG0S3HBAI6 Features

67 Pins
Operating Supply Voltage:1.8V

TC58NYG0S3HBAI6 Applications

There are a lot of Toshiba
TC58NYG0S3HBAI6 Memory applications.

• supercomputers
• telecommunications
• workstations,
• DVD disk buffer
• data buffer
• nonvolatile BIOS memory
• Camcorders
• embedded logic
• eDRAM
• graphics card