TH58NYG3S0HBAI6 Overview

A total of 67 terminations have been planted on the chip. The comprehensive working procedure of this part involves 1 functions. In order to power this memory device, 1.8V will be necessary. A programming voltage of 3V is required to change a nonvolatile memory array's state. This chip contains a EEPROM type of memory IC. Use it only at temperatures above 85°C. A temperature of -40°C is required for the unit to operate, otherwise, it will not operate.

TH58NYG3S0HBAI6 Features

TH58NYG3S0HBAI6 Applications

There are a lot of Toshiba
TH58NYG3S0HBAI6 Memory applications.

• supercomputers
• telecommunications
• workstations,
• DVD disk buffer
• data buffer
• nonvolatile BIOS memory
• Camcorders
• embedded logic
• eDRAM
• graphics card