TPC8012-H(TE12L,Q) Overview

The drain current is the maximum continuous current the device can conduct, and this device has 1.8A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 200V, and this device has a drainage-to-source breakdown voltage of 200VV.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.For this transistor to work, a voltage 200V is required between drain and source (Vdss).

TPC8012-H(TE12L,Q) Features

a continuous drain current (ID) of 1.8A
a drain-to-source breakdown voltage of 200V voltage
a 200V drain to source voltage (Vdss)

TPC8012-H(TE12L,Q) Applications

There are a lot of Toshiba
TPC8012-H(TE12L,Q) applications of single MOSFETs transistors.

• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies