TRS12N65FB,S1Q

new-10%

Manufacturer part number:TRS12N65FB,S1Q

Manufacturer:Toshiba

Description:Silicon Carbide Schottky Tube TO-247-3

Case Package:SOT-23

Datasheet:TRS12N65FB,S1Q Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Package / Case	TO-247-3
Mounting Type	Through Hole
Supplier Device Package	TO-247
Material	SiC
Mounting Style	Through Hole
ECCN (US)	EAR99
Peak Reverse Repetitive Voltage (V)	650
Maximum Continuous Forward Current (A)	12
Peak Non-Repetitive Surge Current (A)	104
Peak Forward Voltage (V)	1.6@6A
Peak Reverse Current (uA)	30
Maximum Power Dissipation (mW)	136000
Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	175
Standard Package Name	TO-247
Supplier Package	TO-247
Military	No
Mounting	Through Hole
Package Height	20.95
Package Length	15.94
Package Width	5.02
PCB changed	3
Tab	Tab
Maximum Operating Temperature	+ 175 C
Manufacturer	Toshiba
Brand	Toshiba
RoHS	Details
Package	Tube
Base Product Number	TRS12N65
Mfr	Toshiba Semiconductor and Storage
Product Status	Active
Current - Average Rectified (Io) (per Diode)	6A (DC)
Packaging	Tube
Series	-
Type	Schottky Diode
Subcategory	Diodes & Rectifiers
Technology	SiC
Pin Count	3
Configuration	Dual Common Cathode
Speed	No Recovery Time > 500mA (Io)
Diode Type	Silicon Carbide Schottky
Current - Reverse Leakage @ Vr	30 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If	1.6 V @ 6 A
Operating Temperature - Junction	175°C
Voltage - DC Reverse (Vr) (Max)	650 V
Product Type	Schottky Diodes & Rectifiers
Diode Configuration	1 Pair Common Cathode
Reverse Recovery Time (trr)	0 ns
Product	Schottky Silicon Carbide Diodes
Vf - Forward Voltage	1.6 V
Product Category	Schottky Diodes & Rectifiers
RoHS Status	RoHS Compliant