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1SS306TE85LF

1SS306TE85LF

1SS306TE85LF

Toshiba Semiconductor and Storage

1SS306TE85LF datasheet pdf and Diodes - Rectifiers - Arrays product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

1SS306TE85LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 11 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-61AA
Number of Pins 4
Diode Element Material SILICON
Packaging Cut Tape (CT)
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Max Operating Temperature 125°C
Min Operating Temperature -55°C
Subcategory Other Diodes
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Element Configuration Single
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Standard
Current - Reverse Leakage @ Vr 1μA @ 200V
Voltage - Forward (Vf) (Max) @ If 1.2V @ 100mA
Forward Current 100mA
Operating Temperature - Junction 125°C Max
Max Surge Current 2A
Output Current-Max 0.1A
Forward Voltage 900mV
Max Reverse Voltage (DC) 200V
Average Rectified Current 100mA
Reverse Recovery Time 60 ns
Peak Reverse Current 1μA
Max Repetitive Reverse Voltage (Vrrm) 250V
Peak Non-Repetitive Surge Current 2A
Diode Configuration 2 Independent
Max Forward Surge Current (Ifsm) 2A
Recovery Time 30 ns
Height 1.1mm
Length 2.9mm
Width 1.5mm
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.12045 $0.36135
6,000 $0.11315 $0.6789
15,000 $0.10585 $1.58775
30,000 $0.10220 $3.066
1SS306TE85LF Product Details

1SS306TE85LF Overview


Devices that have a forward voltage of 900mV will operate.This device can support a maximum output voltage of 0.1A.A surge current should be monitored and should not exceed 2A.When the forward voltage is set to 100mA, this device will operate.In devices such as this one, reverse voltage peak is set at 1μA.In electronic or electrical devices, this is the device that produces the most 150mW heat (energy loss or waste).

1SS306TE85LF Features


900mV forward voltage
a maximum output voltage of 0.1A
a peak voltage of 1μA
a reverse voltage peak of 1μA

1SS306TE85LF Applications


There are a lot of Toshiba Semiconductor and Storage 1SS306TE85LF applications of rectifier diode array.

  • Free wheeling diode in low voltage converters
  • Rectifier for drives applications
  • Crowbar applications
  • Rectifiers for UBS
  • General Rectification
  • Rectifiers in switch mode power supplies (SMPS)
  • Battery chargers

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