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1SS307(TE85L,F)

1SS307(TE85L,F)

1SS307(TE85L,F)

Toshiba Semiconductor and Storage

DIODE GEN PURP 30V 100MA SMINI

SOT-23

1SS307(TE85L,F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 125°C
Min Operating Temperature -55°C
HTS Code 8541.10.00.70
Subcategory Rectifier Diodes
Max Power Dissipation 150mW
Reach Compliance Code unknown
Number of Elements 1
Element Configuration Single
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Standard
Current - Reverse Leakage @ Vr 10μA @ 30V
Voltage - Forward (Vf) (Max) @ If 1.3V @ 100mA
Forward Current 100mA
Operating Temperature - Junction 125°C Max
Max Surge Current 1A
Forward Voltage 1V
Max Reverse Voltage (DC) 30V
Average Rectified Current 100mA
Peak Reverse Current 10nA
Max Repetitive Reverse Voltage (Vrrm) 35V
Capacitance @ Vr, F 6pF @ 0V 1MHz
Max Forward Surge Current (Ifsm) 2A
Reverse Voltage (DC) 30V
Height 1.1mm
Length 2.9mm
Width 1.5mm
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.10230 $0.3069
6,000 $0.09610 $0.5766
15,000 $0.08990 $1.3485
30,000 $0.08680 $2.604

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