1SS383(TE85L,F) datasheet pdf and Diodes - Rectifiers - Arrays product details from Toshiba Semiconductor and Storage stock available on our website
SOT-23
1SS383(TE85L,F) Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
11 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-82
Number of Pins
82
Packaging
Cut Tape (CT)
Published
2009
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
100°C
Min Operating Temperature
-40°C
Subcategory
Other Diodes
Max Power Dissipation
100mW
Element Configuration
Dual
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Type
Schottky
Current - Reverse Leakage @ Vr
5μA @ 40V
Voltage - Forward (Vf) (Max) @ If
600mV @ 100mA
Forward Current
100mA
Operating Temperature - Junction
125°C Max
Max Reverse Voltage (DC)
40V
Average Rectified Current
100mA
Max Repetitive Reverse Voltage (Vrrm)
45V
Peak Non-Repetitive Surge Current
1A
Diode Configuration
2 Independent
Reverse Current-Max
5μA
Max Forward Surge Current (Ifsm)
1A
Radiation Hardening
No
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.198180
$0.19818
10
$0.186962
$1.86962
100
$0.176379
$17.6379
500
$0.166395
$83.1975
1000
$0.156977
$156.977
1SS383(TE85L,F) Product Details
1SS383(TE85L,F) Overview
Monitoring of the forward voltage is advised, and the forward voltage should not exceed 5μA volts.The device operates when the forward voltage is set to 100mA.100mW heat is produced by this electronic or electrical device in the largest amount (energy loss or waste).
1SS383(TE85L,F) Features
a forward voltage of 5μA a forward voltage of 5μA
1SS383(TE85L,F) Applications
There are a lot of Toshiba Semiconductor and Storage 1SS383(TE85L,F) applications of rectifier diode array.