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1SS387CT,L3F

1SS387CT,L3F

1SS387CT,L3F

Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA CST2

SOT-23

1SS387CT,L3F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-882
Packaging Cut Tape (CT)
Published 2014
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Element Configuration Single
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Standard
Current - Reverse Leakage @ Vr 500nA @ 80V
Voltage - Forward (Vf) (Max) @ If 1.2V @ 100mA
Forward Current 100mA
Operating Temperature - Junction 150°C Max
Max Reverse Voltage (DC) 80V
Average Rectified Current 100mA
Reverse Recovery Time 1.6 ns
Max Repetitive Reverse Voltage (Vrrm) 85V
Capacitance @ Vr, F 0.5pF @ 0V 1MHz
Peak Non-Repetitive Surge Current 1A
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
10,000 $0.03060 $0.306
30,000 $0.02880 $0.864
50,000 $0.02700 $1.35
100,000 $0.02520 $2.52

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