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1SS427,L3M

1SS427,L3M

1SS427,L3M

Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA SOD923

SOT-23

1SS427,L3M Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-923
Diode Element Material SILICON
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
HTS Code 8541.10.00.70
Terminal Position DUAL
Terminal Form FLAT
Reach Compliance Code unknown
JESD-30 Code R-PDSO-F2
Number of Elements 1
Power Dissipation-Max 0.15W
Element Configuration Single
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Standard
Current - Reverse Leakage @ Vr 500nA @ 80V
Voltage - Forward (Vf) (Max) @ If 1.2V @ 100mA
Forward Current 100mA
Operating Temperature - Junction -55°C~150°C
Max Reverse Voltage (DC) 80V
Average Rectified Current 100mA
Reverse Recovery Time 1.6 ns
Max Repetitive Reverse Voltage (Vrrm) 85V
Capacitance @ Vr, F 0.3pF @ 0V 1MHz
Peak Non-Repetitive Surge Current 1A
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.232000 $0.232
10 $0.218868 $2.18868
100 $0.206479 $20.6479
500 $0.194792 $97.396
1000 $0.183766 $183.766

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