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1SV307(TPH3,F)

1SV307(TPH3,F)

1SV307(TPH3,F)

Toshiba Semiconductor and Storage

1SV307(TPH3,F) datasheet pdf and Diodes - RF product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

1SV307(TPH3,F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Package / Case SC-76, SOD-323
Number of Pins 2
Operating Temperature 125°C TJ
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Type Switch
Subcategory PIN Diodes
Max Current Rating 50mA
Element Configuration Single
Diode Type Standard - Single
Forward Current 50mA
Forward Voltage 1V
Peak Reverse Current 100nA
Capacitance @ Vr, F 0.5pF @ 1V 1MHz
Reverse Voltage (DC) 30V
Reverse Test Voltage 1V
Diode Capacitance-Nom 0.3pF
Resistance @ If, F 1.5Ohm @ 10mA 100MHz
Diode Res Test Current 10mA
Diode Res Test Frequency 1MHz
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.358905 $0.358905
10 $0.338590 $3.3859
100 $0.319425 $31.9425
500 $0.301344 $150.672
1000 $0.284287 $284.287
1SV307(TPH3,F) Product Details

1SV307(TPH3,F) Overview


System forward voltage should be kept above 1V volts.RF diode is necessary to have a reverse test voltage wRF diodehin 1V in order to obtain a valid conversion result.

1SV307(TPH3,F) Features



1SV307(TPH3,F) Applications


There are a lot of Toshiba Semiconductor and Storage 1SV307(TPH3,F) applications of RF diodes.

  • RF detector
  • RF attenuators and switches
  • Radar systems for industrial use
  • Low diode forward resistance
  • Compensators
  • Two elements in series configuration in a small-sized plastic SMD package
  • Broadband system applications i.e. WCDMA, CATV, etc.
  • Diode ring mixer
  • Sampling circuits
  • Phase detection

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