1SV308,L3F datasheet pdf and Diodes - RF product details from Toshiba Semiconductor and Storage stock available on our website
SOT-23
1SV308,L3F Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Package / Case
SC-79, SOD-523
Diode Element Material
SILICON
Operating Temperature
125°C TJ
Packaging
Tape & Reel (TR)
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
HTS Code
8541.10.00.80
Technology
POSITIVE-INTRINSIC-NEGATIVE
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-F2
Number of Elements
1
Diode Type
PIN - Single
Application
SWITCHING
Current - Max
50mA
Capacitance @ Vr, F
0.5pF @ 1V 1MHz
Voltage - Peak Reverse (Max)
30V
Breakdown Voltage-Min
30V
Frequency Band
VERY HIGH FREQUENCY
Resistance @ If, F
1.5Ohm @ 10mA 100MHz
Diode Capacitance-Max
0.5pF
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.374725
$0.374725
10
$0.353514
$3.53514
100
$0.333504
$33.3504
500
$0.314626
$157.313
1000
$0.296817
$296.817
1SV308,L3F Product Details
1SV308,L3F Overview
Operating from 50mA is the maximum current for this device.This device operates at a maximum peak reverse voltage of 30V according to its specifications.The device may occasionally operate at the lowest breakdown voltage possible, which is 30V.
1SV308,L3F Features
from a maximum current of 50mA volts at its lowest breakdown voltage of 30V
1SV308,L3F Applications
There are a lot of Toshiba Semiconductor and Storage 1SV308,L3F applications of RF diodes.
RF attenuators and switches
Low diode forward resistance
RF attenuators
Smart metering
Set-top boxes, digital media players
Series diode for mobile communication transmit/receive switch