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1SV308(TH3,F)

1SV308(TH3,F)

1SV308(TH3,F)

Toshiba Semiconductor and Storage

1SV308(TH3,F) datasheet pdf and Diodes - RF product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

1SV308(TH3,F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Package / Case SC-79, SOD-523
Operating Temperature 125°C TJ
Packaging Cut Tape (CT)
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Reach Compliance Code unknown
Base Part Number 1SV308
Max Current Rating 50mA
Diode Type PIN - Single
Capacitance @ Vr, F 0.5pF @ 1V 1MHz
Voltage - Peak Reverse (Max) 30V
Resistance @ If, F 1.5Ohm @ 10mA 100MHz
RoHS Status RoHS Compliant
1SV308(TH3,F) Product Details

1SV308(TH3,F) Overview


RF diode operates at a maximum reverse voltage of 30V in accordance wRF diodeh the device specifications.

1SV308(TH3,F) Features



1SV308(TH3,F) Applications


There are a lot of Toshiba Semiconductor and Storage 1SV308(TH3,F) applications of RF diodes.

  • Diode ring mixer
  • (SAT) TV
  • Clamping circuits
  • Two elements in series configuration in a small-sized plastic SMD package
  • Low diode forward resistance
  • Compensators
  • Receiver protectors
  • Ultra high-speed switching
  • Low diode capacitance
  • Low-loss, high-power limiters

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