2SA1873-Y(TE85L,F) datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Toshiba Semiconductor and Storage stock available on our website
SOT-23
2SA1873-Y(TE85L,F) Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
5-TSSOP, SC-70-5, SOT-353
Operating Temperature
125°C TJ
Packaging
Cut Tape (CT)
Published
2009
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Subcategory
Other Transistors
Max Power Dissipation
200mW
Reach Compliance Code
unknown
Polarity
PNP
Element Configuration
Dual
Power - Max
200mW
Gain Bandwidth Product
80MHz
Transistor Type
2 PNP (Dual) Matched Pair, Common Emitter
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
150mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 2mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
50V
Transition Frequency
80MHz
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
-50V
Emitter Base Voltage (VEBO)
-5V
hFE Min
120
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.06720
$0.2016
6,000
$0.06048
$0.36288
15,000
$0.05376
$0.8064
30,000
$0.05040
$1.512
75,000
$0.04480
$3.36
2SA1873-Y(TE85L,F) Product Details
2SA1873-Y(TE85L,F) Description
Continuous quality and product reliability improvement is a priority for TOSHIBA. Nevertheless, because of their innate electrical sensitivity and susceptibility to physical stress, semiconductor devices can malfunction or fail in general. When using TOSHIBA products, it is the buyer's obligation to adhere to safety regulations, build the system safely, and prevent any scenarios in which a malfunction or failure of such TOSHIBA products could result in the loss of human life, bodily harm, or property damage.
2SA1873-Y(TE85L,F) Features
Small package (dual type)
High voltage and high current: VCEO= -50 V, Ic = -150 mA (max)