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2SA1931,NETQ(M

2SA1931,NETQ(M

2SA1931,NETQ(M

Toshiba Semiconductor and Storage

TRANS PNP 5A 50V TO220-3

SOT-23

2SA1931,NETQ(M Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220NIS
Operating Temperature 150°C TJ
Packaging Bulk
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 2W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A 1V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 5A
Frequency - Transition 60MHz

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