2SC2714-Y(TE85L,F)

new-10%

Manufacturer part number:2SC2714-Y(TE85L,F)

Manufacturer:Toshiba Semiconductor and Storage

Description:Bipolar Transistors - BJT Radio-Freq Bipolar NPN 20mA 100mW 30V

Case Package:SOT-23

Datasheet:2SC2714-Y(TE85L,F) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Transistor Element Material	SILICON
Operating Temperature	125°C TJ
Packaging	Cut Tape (CT)
Published	2011
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	Other Transistors
Max Power Dissipation	100mW
Terminal Position	DUAL
Terminal Form	GULL WING
JESD-30 Code	R-PDSO-G3
Number of Elements	1
Element Configuration	Single
Transistor Application	AMPLIFIER
Gain Bandwidth Product	550MHz
Polarity/Channel Type	NPN
Transistor Type	NPN
Collector Emitter Voltage (VCEO)	30V
Max Collector Current	20mA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1mA 6V
Collector Emitter Breakdown Voltage	30V
Gain	23dB
Transition Frequency	550MHz
Max Breakdown Voltage	30V
Collector Base Voltage (VCBO)	40V
Emitter Base Voltage (VEBO)	4V
hFE Min	40
Continuous Collector Current	20mA
Highest Frequency Band	VERY HIGH FREQUENCY B
Noise Figure (dB Typ @ f)	2.5dB @ 100MHz
RoHS Status	RoHS Compliant