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2SC5201(TE6,F,M)

2SC5201(TE6,F,M)

2SC5201(TE6,F,M)

Toshiba Semiconductor and Storage

Trans GP BJT NPN 600V 0.05A 3-Pin LSTM

SOT-23

2SC5201(TE6,F,M) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Bulk
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Elements 1
Power Dissipation 900mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 20mA 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 500mA, 20mA
Collector Base Voltage (VCBO) 600V
Emitter Base Voltage (VEBO) 7V
Radiation Hardening No
RoHS Status RoHS Compliant

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