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2SC5549,T6F(J

  • 2SC5549,T6F(J
  • 2SC5549,T6F(J

2SC5549,T6F(J

2SC5549,T6F(J

Toshiba Semiconductor and Storage

TRANS NPN 1A 400V TO226-3

SOT-23

2SC5549,T6F(J Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Operating Temperature 150°C TJ
Packaging Bulk
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 900mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 40mA 5V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 25mA, 200mA
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 1A

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