2SK3128(Q)

new-10%

Manufacturer part number:2SK3128(Q)

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 30V 60A TO-3PN

Case Package:SOT-23

Datasheet:2SK3128(Q) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Supplier Device Package	TO-3P(N)
Operating Temperature	150°C TJ
Packaging	Tube
Published	2006
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	150W Tc
Element Configuration	Single
Power Dissipation	150W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	12mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2300pF @ 10V
Current - Continuous Drain (Id) @ 25°C	60A Ta
Gate Charge (Qg) (Max) @ Vgs	66nC @ 10V
Rise Time	12ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	75 ns
Continuous Drain Current (ID)	60A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Input Capacitance	2.3nF
Drain to Source Resistance	12mOhm
Rds On Max	12 mΩ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free