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4N25(SHORT,F)

4N25(SHORT,F)

4N25(SHORT,F)

Toshiba Semiconductor and Storage

4N25(SHORT,F) datasheet pdf and Optoisolators - Transistor, Photovoltaic Output product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

4N25(SHORT,F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Contact Plating Gold, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case 6-DIP (0.300, 7.62mm)
Number of Pins 6
Operating Temperature -55°C~100°C
Packaging Tube
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 250mW
Base Part Number 4N25
Voltage - Isolation 2500Vrms
Output Voltage 70V
Output Type Transistor with Base
Number of Elements 1
Power Dissipation 250mW
Voltage - Forward (Vf) (Typ) 1.15V
Input Type DC
Forward Current 80mA
Max Output Voltage 30V
Output Current per Channel 100mA
Rise Time 2μs
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 100mA
Rise / Fall Time (Typ) 2μs 200μs
Current - Output / Channel 100mA
Reverse Breakdown Voltage 3V
Max Input Current 80mA
Collector Emitter Saturation Voltage 500mV
Current Transfer Ratio (Min) 20% @ 10mA
Reverse Voltage (DC) 3V
Current Transfer Ratio 100 %
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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