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4N35(SHORT,F)

  • 4N35(SHORT,F)
  • 4N35(SHORT,F)

4N35(SHORT,F)

4N35(SHORT,F)

Toshiba Semiconductor and Storage

4N35(SHORT,F) datasheet pdf and Optoisolators - Transistor, Photovoltaic Output product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

4N35(SHORT,F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case 6-DIP (0.300, 7.62mm)
Number of Pins 6
Operating Temperature -55°C~100°C
Packaging Tube
Published 1998
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature UL RECOGNIZED
Max Power Dissipation 300mW
Base Part Number 4N35
Voltage - Isolation 2500Vrms
Output Voltage 30V
Output Type Transistor with Base
Number of Elements 1
Configuration SINGLE
Power Dissipation 300mW
Voltage - Forward (Vf) (Typ) 1.15V
Input Type DC
Optoelectronic Device Type TRANSISTOR OUTPUT OPTOCOUPLER
Forward Current 60mA
Max Output Voltage 30V
Output Current per Channel 100mA
Rise Time 3μs
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 100mA
Reverse Breakdown Voltage 6V
Max Input Current 60mA
Collector Emitter Saturation Voltage 300mV
Current Transfer Ratio (Min) 40% @ 10mA
Input Current 10mA
Turn On / Turn Off Time (Typ) 3μs, 3μs
Current Transfer Ratio 100 %
Dark Current-Max 50nA
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.66000 $0.66
10 $0.51500 $5.15
50 $0.42900 $21.45
100 $0.36960 $36.96
250 $0.33000 $82.5

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