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4N36(SHORT,F)

4N36(SHORT,F)

4N36(SHORT,F)

Toshiba Semiconductor and Storage

4N36(SHORT,F) datasheet pdf and Optoisolators - Transistor, Photovoltaic Output product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

4N36(SHORT,F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case 6-DIP (0.300, 7.62mm)
Number of Pins 6
Operating Temperature -55°C~100°C
Packaging Tube
Published 2005
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 300mW
Base Part Number 4N36
Voltage - Isolation 2500Vrms
Output Type Transistor with Base
Number of Channels 1
Voltage - Forward (Vf) (Typ) 1.15V
Input Type DC
Forward Current 10mA
Max Output Voltage 30V
Output Current per Channel 100mA
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 100mA
Max Input Current 60mA
Collector Emitter Saturation Voltage 300mV
Current - DC Forward (If) (Max) 60mA
Current Transfer Ratio (Min) 40% @ 10mA
Turn On / Turn Off Time (Typ) 3μs, 3μs
Current Transfer Ratio 100 %
RoHS Status RoHS Compliant

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