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BAS316,H3F

  • BAS316,H3F
  • BAS316,H3F

BAS316,H3F

BAS316,H3F

Toshiba Semiconductor and Storage

DIODE GEN PURP 100V 250MA USC

SOT-23

BAS316,H3F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SC-76, SOD-323
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 200nA @ 80V
Voltage - Forward (Vf) (Max) @ If 1.25V @ 150mA
Operating Temperature - Junction 150°C Max
Voltage - DC Reverse (Vr) (Max) 100V
Current - Average Rectified (Io) 250mA
Reverse Recovery Time 3ns
Capacitance @ Vr, F 0.35pF @ 0V 1MHz
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.154000 $0.154
10 $0.145283 $1.45283
100 $0.137059 $13.7059
500 $0.129301 $64.6505
1000 $0.121982 $121.982

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